The advantages of fiber communication system is huge-capacity,low-cost, broad-band and low-loss,also the Si-based semiconductor devices have the advantages of mature production technology and low production costs. How to integrate the advantages of both? Developing Si-base Ge Quantum-Dots photodetector used in fiber communication field is the right way.It will prepare for ultra-large-scale optoelectronic integrated communications and future photonic communication.After all it will benefit the mankind.Ultra-High Vacuum Chemical Vapor Deposition(UHV/CVD) System is adopted in this thesis to make a study of Ge quantum dots which is grown on the Si-based with the thermodynamic and kinetic theiry of S-K growth model.After a systematically study,We got the optimal conditions for single-layer growth of Ge quantum dots:Temperature T=550℃;time t =5min;GeH4 flow=lsccm.
